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  Datasheet File OCR Text:
 Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time
Vorlaufige Daten / Preliminary Data
Chip position
1.1 1.0 0.3 0.2
SFH 2400 SFH 2400 FA
4.8 4.4 Active area 1x1 0.9 0.6
0.8 0.6
Cathode
2.7 2.5
Anode
GEO06972
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm (SFH 2400) und bei 880 nm (SFH 2400 FA) q Kurze Schaltzeit (typ. 20 ns) q SMT-Bauform, geeignet fur Vapor PhaseLoten und IR-Reflow-Loten (JEDEC level 3) und Wellenloten (JEDEC level 6) q Nur gegurtet lieferbar Anwendungen q Industrieelektronik q "Messen/Steuern/Regeln" q Schnelle Lichtschranken fur Gleich- und Wechsellichtbetrieb q LWL Typ Type SFH 2400 SFH 2400 FA Bestellnummer Ordering Code Q62702-P1794 on request
Gehause Package Klares Epoxy-Gieharz, Kathodenkennzeichung: breiter Anschlu Transparent epoxy resin, cathode marking: broad lead
Semiconductor Group
1
2.1 1.9
0.5 0.3 1.1 0.9
0.1 0.0
not connected
Features q Especially suitable for applications from 400 nm to 1100 nm (SFH 2400) and of 880 nm (SFH 2400 FA) q Short switching time (typ. 20 ns) q SMT package, suitable for vapor phase and IR reflow soldering (JEDEC level 3) and wave soldering (JEDEC level 6) q Available only on tape and reel Applications q Industrial electronics q For control and drive circuits q Photointerrupters q Fiber optic transmission systems
1998-11-12
SFH 2400 SFH 2400 FA
Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung Total power dissipation Warmewiderstand fur Montage auf PC-Board Thermal resistance for mounting on pcb Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Normlicht/standard light A, T = 2856 K VR = 5 V, = 950 nm, Ee = 1 mW/cm2 Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Halbwinkel Half angle Symbol Symbol SFH 2400 Wert Value SFH 2400 FA Einheit Unit Symbol Symbol Wert Value - 40 ... + 85 201) 120 450 Einheit Unit C V mW K/W
Top; Tstg VR Ptot RthJA
S S
S max
10 (> 5.5) - 850
- 6.2 ( 3.6) 900
nA/Ix A nm nm
400 ... 1100 750 ... 1100
A LxB LxW
1 1x1
1 1x1
mm2 mm x mm
60
60
Grad deg.
1)
Kurzfristige Uberlastung bis 50 V fur 1 - 2 sec. ist erlaubt. Short-term overload up to 50 V for 1 to 2 sec. is permitted.
Semiconductor Group
2
1998-11-12
SFH 2400 SFH 2400 FA
Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Description Dunkelstrom, VR = 20 V Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, = 950 nm Kurzschlustrom Short-circuit current Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, = 950 nm Symbol Symbol SFH 2400 Wert Value SFH 2400 FA 0.1 (< 5) 0.59 0.86 nA A/W Electrons Photon 0.1 (< 5) 0.62 0.89 Einheit Unit
IR S
VO VO
320 -
- 320
mV mV
ISC ISC
10 - 5
- 3.0 5
A A ns
Anstiegs- und Abfallzeit des Fotostromes tr, tf Rise and fall time of the photocurrent RL = 50 ; VR = 20 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 80 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Normlicht/standard light A = 950 nm Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 20 V, = 850 nm Nachweisgrenze, VR = 20 V, = 850 nm Detection limit
VF C0 TCV TCI
1.3 36 - 2.6
1.3 36 - 2.6
V pF mV/K %/K
0.18 -
- 0.2 2.9 x 10- 14 W Hz cm * Hz W
NEP
2.9 x 10- 14
D*
3.5 x 1012
3.5 x 1012
Semiconductor Group
3
1998-11-12
SFH 2400 SFH 2400 FA
Relative spectral sensitivity SFH 2400 Srel = f ()
100
OHF01129
Relative spectr. sensitivity SFH 2400 FA Total power dissipation Srel = f () Ptot = f (TA)
100
OHF01773
S rel %
80
S rel %
80
140 mW Ptot 120 100
OHF00309
60
60
80 60 40
40
40
20
20
20
0 400
600
800
1000 nm 1200
0 400
0
600
800
1000 nm 1200
0
20
40
60
80 C 100 TA
Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) SFH 2400 FA
10 2
OHF01765
Photocurrent IP = f (Ev), VR = 5 V Open-circuit voltage VO = f (Ev) SFH 2400
10 4 mV
Dark current IR = f (VR), E = 0
10 3 mV 10 4 pA
OHF01026
P
A
10 2
OHF01025
VO
10 3
P
A
VO
VO
R
10 1
VO
10 0 10 2
10 1
10 2
10 3
P
10 0
10 -1 10 1
P
10 1 10 2
10 -2 10 0
10 1
10 2
W/cm 2
Ee
10 0 10 4
10 -1 10 0
10 0 10
1
10
2
10
3
lx 10 4
10 1
0
10
20
EV
V VR
30
Directional characteristics Srel = f ()
40 30 20 10
Capacitance C = f (VR), f = 1 MHz, E = 0
0 1.0
OHF01402
C
40 pF 35 30 25 20
OHF00331
50 0.8 60
0.6
70
0.4
15
80 0.2 0
10 5 0 -3 10
90
100
10 -2
10 -1
10 0
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
10 1 V 10 2 VR
Semiconductor Group
4
1998-11-12


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